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| FUJITSU SEMICONDUCTOR INTRODUCTION SHEET NP05-11449-2E 32 Mbit Mobile FCRAM 3.0 V, Page Mode MB82DP02183E-65L FEATURES * * * * * TM Pseudo SRAM with Asynchronous SRAM Interface 8 Words Page Read Access Capability _____ ______ * Byte Control by LB, UB Low Power Consumption Various Power Down Mode Sleep 4 Mbit Partial 8 Mbit Partial Chip / Wafer Business MAIN SPECIFICATIONS Part Number Organization Supply Voltage Page Address Access Time (Max.) Address Access Time (Max.) Active Current (Max.) Standby Current (Max.) Power Down Current (Max.) Sleep MB82DP02183E-65L 2 M Word x 16 bit 2.6 V to 3.1 V 20 ns 65 ns 30 mA 120 A 10 A Note: FCRAM is a trademark of Fujitsu Limited, Japan. September, 2007 1/1 Copyright(c)2007 FUJITSU LIMITED All rights reserved |
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